STB28NM60ND Datasheet, PDF (5/22 Pages) STMicroelectronics – Low input capacitance and gate charge

STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND
Electrical characteristics
Symbol
Table 7. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD Source-drain current
-
(1)
I_SDM Source-drain current (pulsed)
-
(2)
V_SD
Forward on voltage
I_SD = 23 A, V_GS = 0
-
23 A
92 A
1.6 V
t_rr Reverse recovery time
- 170
I_SD = 23 A, V_DD = 60 V
ns
Q_rr
I_RRM
Reverse recovery charge
Reverse recovery current
di/dt=100 A/μs
(see Figure 17)
- 1160
nC
- 14
A
t_rr Reverse recovery time
I_SD = 23 A,V_DD = 60 V - 237
ns
Q_rr Reverse recovery charge
di/dt=100 A/μs,
T_J = 150 °C
- 2090
nC
I_RRM Reverse recovery current
(see Figure 17)
- 18
A
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 μs, duty cycle 1.5%.
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