STB28NM60ND Datasheet, PDF (1/22 Pages) STMicroelectronics – Low input capacitance and gate charge

STB28NM60ND, STF28NM60ND,
STP28NM60ND, STW28NM60ND
N-channel 600 V, 0.13 Ω typ., 23 A FDmesh™ II Power MOSFETs
in D²PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet - production data
TAB
2
3
1
D²PAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
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*
Features
Order codes
V_{DS @}
T_{J max.}
R_{DS(on) max}
I_D
STB28NM60ND
STF28NM60ND
650 V
STP28NM60ND
0.150 Ω
23 A
STW28NM60ND
• Intrinsic fast-recovery body diode
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche
capabilities
Applications
• Switching applications
Description
These FDmesh™ II Power MOSFETs with
6
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
$0Y
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
Order codes
STB28NM60ND
STF28NM60ND
STP28NM60ND
STW28NM60ND
Table 1. Device summary
Marking
Packages
2
D PAK
28NM60ND
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
May 2014
This is information on a product in full production.
DocID024520 Rev 3
1/22
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