STB28NM60ND Datasheet, PDF (3/22 Pages) STMicroelectronics – Low input capacitance and gate charge

STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Value
Parameter
D²PAK, TO-220,
TO-247
TO-220FP
V_DS
V_GS
I_D
I_D
(2)
I_DM
P_TOT
(3)
dv/dt
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Peak diode recovery voltage slope
V_ISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s; T_C=25 °C)
T_stg Storage temperature
T_J
Max. operating junction temperature
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area
3. I_SD ≤ 23 A, di/dt ≤ 600 A/μs, V_DD = 80% V_(BR)DSS
600
±25
23
14.5
92
190
40
(1)
23
(1)
14.5
92(1)
35
2500
–55 to 150
150
Unit
V
V
A
A
A
W
V/ns
V
°C
°C
Symbol
Table 3. Thermal data
Parameter
D²PAK TO-220FP TO-220 TO-247 Unit
R_thj-case Thermal resistance junction-case max
R_thj-amb Thermal resistance junction-ambient max
(1)
R_thj-pcb Thermal resistance junction-pcb max
1. When mounted on 1inch² FR-4 board, 2 oz Cu
0.66
30
3.6
62.5
0.66
50
°C/W
°C/W
°C/W
Symbol
Table 4. Avalanche characteristics
Parameter
Max value
Unit
Avalanche current, repetitive or not-
I_{AR repetitive (pulse width limited by TJ max)}
5
A
Single pulse avalanche energy
E_AS
450
mJ
(starting T_J = 25 °C, I_D = I_AS, V_DD = 50 V)
DocID024520 Rev 3
3/22