STB28NM60ND Datasheet, PDF (4/22 Pages) STMicroelectronics – Low input capacitance and gate charge

Electrical characteristics
STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND
2
Electrical characteristics
(T_CASE=25 °C unless otherwise specified).
Table 5. On/off states
Symbol
Parameter
Test conditions
Drain-source
V_(BR)DSS
breakdown voltage
I_D = 1 mA, V_GS = 0
(1)
dv/dt
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Drain source voltage slope
Zero gate voltage
drain current (V_GS = 0)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
V_DD= 480 V, I_D= 23 A,
V_GS= 10 V
V_DS = 600 V
V_DS = 600 V, T_C= 125 °C
V_GS = ± 20 V
V_DS = V_GS, I_D = 250 μA
V_GS = 10 V, I_D = 11.5 A
1. Characteristic value at turn off on inductive load.
Value
Unit
Min. Typ. Max.
600
V
45
V/ns
1 μA
100 μA
±100 nA
3
4
5V
0.13 0.15 Ω
Symbol
Parameter
Table 6. Dynamic
Test conditions
Min. Typ. Max. Unit
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 100 V, f = 1 MHz,
V_GS = 0
- 2090 -
pF
-
90
-
pF
- 5.5 -
pF
(1) ^{Equivalent output}
C_{oss eq. capacitance}
V_GS = 0, V_DS = 0 to 480 V - 312 -
pF
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
R_g Gate input resistance
- 23.5 -
ns
V_DD = 300 V, I_D = 11.5 A
R_G = 4.7 Ω V_GS = 10 V
- 21.5 -
ns
(see Figure 18),
- 92 -
ns
(see Figure 20)
- 27 -
ns
V_DD = 480 V, I_D = 23 A,
V_GS = 10 V,
(see Figure 10)
- 62.5 - nC
- 11 - nC
- 38 - nC
f = 1 MHz,
test signal level = 20 mV, - 4.7 -
Ω
I_D = 0
1. C_{oss eq}. is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DSS
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DocID024520 Rev 3