STB25NM50N_07 Datasheet, PDF (5/18 Pages) STMicroelectronics – N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh™ Power MOSFET

STB25NM50N/-1 - STF25NM50N - STP25NM50N - STW25NM50N
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD =250V, I_D = 11A
R_G = 4.7Ω V_GS = 10V
(see Figure 17)
Min. Typ. Max. Unit
23
ns
23
ns
75
ns
22
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 22A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 22A, di/dt = 100A/µs
V_DD = 100V, T_j = 25°C
(see Figure 22)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 22A, di/dt = 100A/µs
V_DD = 100V, T_j = 150°C
(see Figure 22)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min Typ. Max Unit
22 A
88 A
1.3 V
460
ns
6.9
µC
30
A
532
ns
8.25
µC
31
A
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