STB25NM50N_07 Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh™ Power MOSFET

STB25NM50N/-1 - STF25NM50N
STP25NM50N - STW25NM50N
N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I²/D²PAK - TO-247
Second generation MDmesh™ Power MOSFET
General features
Type
V_DSS
(@Tjmax)
R_DS(on)
I_D
STB25NM50N
STB25NM50N-1
STF25NM50N
STP25NM50N
STW25NM50N
550V
550V
550V
550V
550V
<0.140Ω
<0.140Ω
<0.140Ω
<0.140Ω
<0.140Ω
22A
22A
22A⁽¹⁾
22A
22A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistancel
Description
This series of devices is realized with the second
generation of MDmesh™ Technology. This
revolutionary MOSFET associates a new vertical
structure to the Company’s strip layout to yield
one of the world’s lowest on-resistance and gate
charge. It is therefore suitable for the most
demanding high efficiency converters
Applications
■ Switching application
Order codes
Part number
STB25NM50N
STB25NM50N-1
STF25NM50N
STP25NM50N
STW25NM50N
Marking
B25NM50N
B25NM50N-1
F25NM50N
P25NM50N
W25NM50N
3
2
1
TO-220FP
3
1
D²PAK
3
2
1
TO-220
123
I²PAK
TO-247
Internal schematic diagram
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape & reel
Tube
Tube
Tube
Tube
January 2007
Rev 12
1/18
www.st.com
18