STB25NM50N_07 Datasheet, PDF (3/18 Pages) STMicroelectronics – N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh™ Power MOSFET

STB25NM50N/-1 - STF25NM50N - STP25NM50N - STW25NM50N
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
TO-220 - I²PAK
D²PAK - TO-247
TO-220FP
Unit
V_DS
V_DGR
V_GS
I_D
I_D
I_DM ⁽²⁾
P_TOT
Drain-source voltage (V_GS = 0)
Drain-gate voltage (R_GS = 20 kΩ)
Gate- source voltage
Drain current (continuous) at T_C = 25°C
Drain current (continuous) at T_C = 100°C
Drain current (pulsed)
Total dissipation at T_C = 25°C
Derating factor
V_ISO
dv/dt ⁽³⁾
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1s;T_C=25°C)
Peak diode recovery voltage slope
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD < 22A, di/dt < 400 A/µs, V_DD =80% V_(BR)DSS
500
500
±25
22
14
88
160
1.28
22 ⁽¹⁾
14 ⁽¹⁾
88 ⁽¹⁾
40
0.32
V
V
V
A
A
A
W
W/°C
--
2500
V
15
–55 to 150
150
V/ns
°C
°C
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Rthj-amb
T_l
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Value
TO-220 - I²PAK
D²PAK - TO-247
TO-220FP
Unit
0.78
3.1 °C/W
62.5
°C/W
300
°C
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
I_AR
(pulse width limited by Tj Max)
Single pulse avalanche energy
E_AS
(starting Tj=25°C, Id=Ias, Vdd=50V)
Value
Unit
10
A
350
mJ
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