STB25NM50N_07 Datasheet, PDF (4/18 Pages) STMicroelectronics – N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh™ Power MOSFET

Electrical characteristics
STB25NM50N/-1 - STF25NM50N - STP25NM50N - STW25NM50N
2
Electrical characteristics
(T_CASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Drain-source
V_{(BR)DSS breakdown voltage}
dv/dt ⁽¹⁾ Drain source voltage slope
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Zero gate voltage
drain current (V_GS = 0)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
I_D = 1mA, V_GS = 0
Vdd=400V, Id=25A, Vgs=10V
V_DS = Max rating
V_DS = Max rating, @125°C
V_GS = ± 20V
V_DS = V_GS, I_D = 250µA
V_GS = 10V, I_D = 11A
500
V
44
V/ns
1 µA
10 µA
100 nA
2
3
4V
0.110 0.140 Ω
1. Characteristic value at turn off on inductive load
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
g_fs ⁽¹⁾
C_iss
C_oss
C_rss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS=15V_, I_D =11A
V_DS = 25V, f = 1MHz,
V_GS = 0
19
S
pF
2565
pF
511
pF
77
C_{oss eq.} ⁽²⁾
Equivalent output
capacitance
V_GS = 0V, V_DS = 0V to 400V
315
pF
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
R_g Gate input resistance
V_DD = 400V, I_D =22A,
V_GS = 10V,
(see Figure 18)
f=1MHz Gate DC Bias=0
Test signal level=20mV
open drain
84
nC
11
nC
35
nC
1.6
Ω
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2. C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DS
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