STB21NK50Z Datasheet, PDF (5/13 Pages) STMicroelectronics – N-channel 500 V, 0.23 Ω, 17 A, D2PAK Zener-protected superMESH™ Power MOSFET

STB21NK50Z
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
t_d(on)
t_r
Turn-on delay time
Rise time
t_d(off)
t_f
Turn-off delay time
Fall time
Test conditions
V_DD= 250 V, I_D= 8.5 A,
R_G= 4.7Ω, V_GS= 10 V
(see Figure 16)
V_DD= 250 V, I_D= 8.5 A,
R_G= 4.7 Ω, V_GS=10 V
(see Figure 16)
Min. Typ. Max. Unit
28
ns
20
ns
70
ns
15
ns
Table 8.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
BV_GSO(1)
Gate-source breakdown voltage
Igs=±1 mA
(open drain)
30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Table 9. Source drain diode
Symbol
Parameter
Test conditions
I_SD Source-drain current
I_SDM(1) Source-drain current (pulsed)
V_SD(2) Forward on voltage
I_SD= 17 A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD= 17 A,
di/dt = 100 A/µs,
V_R= 100 V
(see Figure 16)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD= 17 A,
di/dt = 100 A/µs,
V_R= 100 V, Tj=150 °C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
17 A
68 A
1.6 V
355
ns
3.90
µC
22
A
440
ns
5.72
µC
25
A
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