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STB21NK50Z Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel 500 V, 0.23 Ω, 17 A, D2PAK Zener-protected superMESH™ Power MOSFET
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Electrical characteristics
2
Electrical characteristics
STB21NK50Z
(TCASE = 25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
500
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125 °C
1 µA
50 µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
±10 µA
VGS(th) Gate threshold voltage
VDS= VGS, ID = 100 µA
3 3.75 4.5 V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 8.5 A
0.23 0.27 Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss Input capacitance
2600
pF
Coss Output capacitance
VDS = 25 V, f=1 MHz, VGS=0
328
pF
Crss
Reverse transfer
capacitance
72
pF
Coss
(1)
eq .
Equivalent output
capacitance
VGS=0, VDS =0 to 400 V
187
pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=400 V, ID = 17 A
VGS =10 V
(see Figure 15)
85 119 nC
15.5
nC
42
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
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