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STB21NK50Z Datasheet, PDF (1/13 Pages) STMicroelectronics – N-channel 500 V, 0.23 Ω, 17 A, D2PAK Zener-protected superMESH™ Power MOSFET
STB21NK50Z
N-channel 500 V, 0.23 Ω, 17 A, D2PAK
Zener-protected superMESH™ Power MOSFET
Features
Type
VDSS
STB21NK50Z 500 V
RDS(on)
max
< 0.27 Ω
ID
Pw
17 A 190 W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
Applications
■ Switching applications
– Automotive
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
3
1
D²PAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STB21NK50Z
Marking
21NK50Z
Package
D²PAK
Packaging
Tape and reel
September 2008
Rev 1
1/13
www.st.com
13