STB21NK50Z Datasheet, PDF (3/13 Pages) STMicroelectronics – N-channel 500 V, 0.23 Ω, 17 A, D2PAK Zener-protected superMESH™ Power MOSFET

STB21NK50Z
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D
I_D
I_DM(1)
P_TOT
Drain-source voltage (V_GS = 0)
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C=100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Derating Factor
Vesd(G-S) G-S ESD (HBM C=100 pF, R=1.5 kΩ)
dv/dt⁽²⁾ Peak diode recovery voltage slope
T_stg
Storage temperature
T_J
Max operating junction temperature
1. Pulse width limited by safe operating area
2. I_SD ≤ 17 A, di/dt ≤ 200 A/µs,V_DD ≤ V_(BR)DSS, T_J ≤ T_JMAX
Table 3. Thermal data
Symbol
Parameter
R_thj-case
R_thj-amb
T_l
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Table 4. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
I_AR
(pulse width limited by Tj Max)
Single pulse avalanche energy
E_AS
(starting T_J=25 °C, I_D=I_AR, V_DD=50 V)
Electrical ratings
Value
500
± 30
17
10.71
68
190
1.51
6000
4.5
-55 to 150
150
Unit
V
V
A
A
A
W
W/°C
V
V/ns
°C
°C
Value
0.66
62.5
300
Value
17
850
Unit
°C/W
°C/W
°C
Unit
A
mJ
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