STB18N60DM2 Datasheet, PDF (5/15 Pages) STMicroelectronics – Fast-recovery body diode

STB18N60DM2
Symbol
Parameter
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM⁽¹⁾
VSD ⁽²⁾
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 12 A
ISD = 12 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive load
switching and diode recovery
times")
-
12 A
-
48 A
-
1.6 V
- 125
ns
- 0.675
nC
-
11
A
trr
Reverse recovery time
ISD = 12 A, di/dt = 100 A/µs,
- 190
ns
Qrr
Reverse recovery charge
VDD = 60 V, Tj = 150 °C (see
Figure 16: "Test circuit for
- 1225
nC
IRRM
Reverse recovery current ^{inductive load switching and}
diode recovery times")
-
13
A
Notes:
(1) _{Pulse width is limited by safe operating area.}
(2) _{Pulse test: pulse duration = 300 µs, duty cycle 1.5%.}
DocID027677 Rev 3
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