STB18N60DM2 Datasheet, PDF (1/15 Pages) STMicroelectronics – Fast-recovery body diode

STB18N60DM2
N-channel 600 V, 0.260 Ω typ., 12 A MDMesh™ DM2
Power MOSFET in a D²PAK package
Datasheet - production data
TAB
2
3
1
D²PAK
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STB18N60DM2
VDS
600 V
RDS(on) max.
0.295 Ω
ID
12 A
 Fast-recovery body diode
 Extremely low gate charge and input
capacitance
 Low on-resistance
 100% avalanche tested
 Extremely high dv/dt ruggedness
 Zener-protected
Applications
 Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STB18N60DM2
S(3)
AM15572v1_tab
Table 1: Device summary
Marking
Package
18N60DM2
D²PAK
Packing
Tape and Reel
January 2016
DocID027677 Rev 3
This is information on a product in full production.
1/15
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