STB18N60DM2 Datasheet, PDF (3/15 Pages) STMicroelectronics – Fast-recovery body diode

STB18N60DM2
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
VGS
ID
IDM⁽¹⁾
PTOT
dv/dt⁽²⁾
dv/dt⁽³⁾
Tstg
Tj
Gate-source voltage
Drain current (continuous) at Tcase = 25 °C
Drain current (continuous) at Tcase= 100 °C
Drain current (pulsed)
Total dissipation at Tcase = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
Notes:
(1) _{Pulse width is limited by safe operating area.}
(2) _{ISD ≤ 12 A, di/dt ≤ 400 A/µS, VDS(peak) < V(BR)DSS, VDD = 80% V(BR)DSS.}
(3) _{VDS ≤ 480 V.}
Symbol
Rthj-case
Rthj-pcb⁽¹⁾
Table 3: Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-pcb
Notes:
(1) _{When mounted on 1 a inch² FR-4, 2 Oz copper board}
Symbol
IAR⁽¹⁾
EAR⁽²⁾
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive
Single pulse avalanche energy
Notes:
(1) _{Pulse width is limited by Tjmax.}
(2) _{starting Tj = 25 °C, ID = IAR, VDD = 50 V.}
Electrical ratings
Value
± 25
12
7.6
48
90
40
50
–55 to 150
Unit
V
A
A
W
V/ns
°C
Value
1.39
30
Unit
°C/W
Value
Unit
2.5
A
380
mJ
DocID027677 Rev 3
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