STB18N60DM2 Datasheet, PDF (4/15 Pages) STMicroelectronics – Fast-recovery body diode

Electrical characteristics
STB18N60DM2
2
Electrical characteristics
(Tcase= 25 °C unless otherwise specified)
Table 5: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
IDSS
Zero gate voltage drain
current
IGSS
Gate-body leakage
current
VGS = 0 V, VDS = 600 V
VGS = 0 V, VDS = 600 V,
Tcase = 125 °C
VDS = 0 V, VGS = ±25 V
VGS(th)
RDS(on)
Gate threshold voltage
Static drain-source on-
resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 6 A
Min. Typ. Max. Unit
600
V
1.5 µA
100 µA
±10 µA
3
4
5
V
0.260 0.295 Ω
Symbol
Ciss
Coss
Crss
Coss eq.⁽¹⁾
RG
Qg
Qgs
Qgd
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
Table 6: Dynamic
Test conditions
VDS = 100 V, f = 1 MHz,
VGS = 0 V
VDS = 0 to 480 V, f = 1 MHz,
VGS = 0 V
f = 1 MHz, ID = 0 A
VDD = 480 V, ID = 12 A,
VGS = 10 V (see Figure 15: "Test
circuit for gate charge behavior")
Min. Typ. Max. Unit
- 800 -
-
40
-
pF
- 1.33 -
-
80
-
pF
- 5.6 -
Ω
- 20
-
- 5.2
- nC
- 8.5 -
Notes:
(1) _{Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS}
increases from 0 to 80% VDSS
Symbol
Parameter
td(on) Turn-on delay time
tr
Rise time
td(off) Turn-off-delay time
tf
Fall time
Table 7: Switching times
Test conditions
VDD = 300 V, ID = 6 A RG = 4.7 Ω,
VGS = 10 V (see Figure 14: "Test
circuit for resistive load switching
times" and Figure 19: "Switching time
waveform")
Min. Typ. Max. Unit
- 13.5 -
-
8
-
ns
- 9.5 -
- 32.5 -
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