STB12NM60N Datasheet, PDF (5/18 Pages) STMicroelectronics – N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh™ Power MOSFET

STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD = 300V, I_D = 5A,
R_G = 4.7Ω, V_GS = 10V
(see Figure 17)
Min Typ Max Unit
15
ns
9
ns
60
ns
10
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min Typ Max Unit
I_SD
I_SDM ⁽¹⁾
V_SD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 10A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD =10A, di/dt =100A/µs,
V_DD = 100V, Tj = 25°C
(see Figure 19)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
V_DD = 100V
di/dt =100A/µs, I_SD = 10A
Tj = 150°C (see Figure 19)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
10 A
40 A
1.3 V
360
ns
3.5
µC
20
A
530
ns
5.20
µC
20
A
5/18