STB12NM60N Datasheet, PDF (4/18 Pages) STMicroelectronics – N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh™ Power MOSFET

Electrical characteristics
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
2
Electrical characteristics
(T_CASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 1mA, V_GS= 0
600
dv/dt⁽¹⁾
Drain-source voltage slope
V_DD = 400V,I_D = 10A,
V_GS = 10V
I_DSS
Zero gate voltage drain
current (V_GS = 0)
V_DS = Max rating,
V_DS = Max rating,@125°C
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS = ±20V
V_GS(th) Gate threshold voltage
V_DS= V_GS, I_D = 250µA
2
R_DS(on)
Static drain-source on
resistance
V_GS= 10V, I_D= 5A
41
3
0.35
1
10
100
4
0.41
V
V/ns
µA
µA
nA
V
Ω
1. Characteristics value at turn off on inductive load
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
g_fs(1)
C_iss
C_oss
C_rss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS =15V, I_D= 5A
V_DS = 50V, f =1MHz,
V_GS = 0
8
S
960
pF
65
pF
7
pF
C_oss
(2)
eq.
Equivalent output
capacitance
V_GS = 0, V_DS = 0V to 480V
180
pF
f=1MHz Gate DC Bias=0
Rg Gate input resistance
Test signal level=20mV
5
Ω
open drain
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 480V, I_D = 10A
V_GS = 10V
(see Figure 18)
30.5
nC
5
nC
16
nC
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DSS
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