STB12NM60N Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh™ Power MOSFET

STB12NM60N/-1 - STF12NM60N
STP12NM60N - STW12NM60N
N-channel 600V - 0.35Ω - 10A - D²/I²PAK - TO-220/FP - TO-247
Second generation MDmesh™ Power MOSFET
Features
Type
V_DSS
(@Tjmax)
R_DS(on)
I_D
STB12NM60N
STB12NM60N-1
STF12NM60N
STP12NM60N
STW12NM60N
650V
650V
650V
650V
650V
< 0.41Ω
< 0.41Ω
< 0.41Ω
< 0.41Ω
< 0.41Ω
10A
10A
10A⁽¹⁾
10A
10A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Description
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Application
■ Switching application
Order codes
Part number
STB12NM60N
STB12NM60N-1
STF12NM60N
STP12NM60N
STW12NM60N
Marking
B12NM60N
B12NM60N
F12NM60N
P12NM60N
W12NM60N
3
1
D²PAK
123
I²PAK
3
2
1
TO-220
TO-247
3
2
1
TO-220FP
Internal schematic diagram
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape & reel
Tube
Tube
Tube
Tube
April 2007
Rev 2
1/18
www.st.com
18