STB12NM60N Datasheet, PDF (3/18 Pages) STMicroelectronics – N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh™ Power MOSFET

STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
Drain-source voltage (V_GS=0)
V_GS
Gate-source voltage
I_D
Drain current (continuous) at T_C = 25°C
I_D
Drain current (continuous) at T_C = 100°C
I_DM ⁽²⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25°C
dv/dt ^{(3) Peak diode recovery voltage slope}
V_ISO
T_j
T_stg
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;T_C=25°C)
Operating junction temperature
Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤10A, di/dt ≤400A/µs, V_DD =80% V_(BR)DSS
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-amb max
T_l
Maximum lead temperature for soldering
purpose
Value
D²PAK/I²PAK
TO-220/TO-247
TO-220FP
Unit
600
V
± 25
V
10
10 ⁽¹⁾
A
6.3
6.3 ⁽¹⁾
A
40
40 ⁽¹⁾
A
90
25
W
15
V/ns
--
2500
V
-55 to 150
°C
D²PAK/I²PAK
TO-220/TO-247
TO-220FP
Unit
1.38
5
62.5
°C/W
°C/W
300
°C
Table 3. Avalanche characteristics
Symbol
Parameter
I_AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
E_AS
(starting Tj=25°C, I_D=I_AS, V_DD= 50V)
Max value
Unit
3.5
A
200
mJ
3/18