STB12NM50N_08 Datasheet, PDF (5/19 Pages) STMicroelectronics – N-channel 500 V, 0.29 Ω, 11 A MDmesh™ II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP

STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min Typ. Max Unit
V_DD=250 V, I_D= 5.5 A,
15
15
ns
ns
R_G=4.7 Ω, V_GS=10 V
60
ns
(see Figure 16)
14
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
I_SD
I_SDM(1)
V_SD(2)
t_rr
Q_rr
I_RRM
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD=11 A, V_GS=0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD=11 A, V_DD=100 V
di/dt = 100 A/µs,
(see Figure 18)
I_SD=11 A,
di/dt = 100 A/µs,
V_DD=100 V, Tj=150 °C
(see Figure 18)
11 A
44 A
1.3 V
340
ns
3.5
µC
20
A
420
ns
4
µC
20
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
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