STB12NM50N_08 Datasheet, PDF (3/19 Pages) STMicroelectronics – N-channel 500 V, 0.29 Ω, 11 A MDmesh™ II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP

STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220 / I²PAK
D²PAK / DPAK
TO-220FP
Unit
V_DS
Drain-source voltage (V_GS = 0)
V_GS
Gate-source voltage
I_D
Drain current (continuous) at T_C = 25 °C
500
V
± 25
V
11
11⁽¹⁾
A
I_D
I_DM(2)
Drain current (continuous) at T_C=100 °C
Drain current (pulsed)
6.7
6.7⁽¹⁾
A
44
44 ⁽¹⁾
A
P_TOT
dv/dt⁽³⁾
Total dissipation at T_C = 25 °C
Peak diode recovery voltage slope
100
25
15
W
V/ns
V_ISO
T_stg
T_J
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s;T_C=25 °C)
Storage temperature
Max. operating junction temperature
--
2500
V
-55 to 150
°C
150
°C
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤ 11A, di/dt ≤ 400A/µs, V_DD =80%V_(BR)DSS
Table 3. Thermal data
Symbol
Parameter
Value
Unit
TO-220 I²PAK DPAK D²PAK TO-220FP
R_thj-case
R_thj-amb
R_thj-pcb
T_l
Thermal resistance junction-
case max
Thermal resistance junction-amb
max
Thermal resistance junction-pcb
max
Maximum lead temperature for
soldering purposes
1.25
62.5
--
--
--
-- 50 30
300
5
°C/W
62.5 °C/W
--
°C/W
°C
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
I_AS
(pulse width limited by Tj Max)
Single pulse avalanche energy
E_AS
(starting Tj=25°C, Id=Ias, Vdd=50V)
5
A
350
mJ
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