STB12NM50N_08 Datasheet, PDF (1/19 Pages) STMicroelectronics – N-channel 500 V, 0.29 Ω, 11 A MDmesh™ II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP

STB12NM50N,STD12NM50N,STI12NM50N
STF12NM50N, STP12NM50N
N-channel 500 V, 0.29 Ω, 11 A MDmesh™ II Power MOSFET
TO-220 - DPAK - D²PAK - I²PAK - TO-220FP
Features
Type
STB12NM50N
STD12NM50N
STI12NM50N
STF12NM50N
STP12NM50N
V_DSS
(@Tjmax)
550 V
550 V
550 V
550 V
550 V
R_DS(on)
max
0.38 Ω
0.38 Ω
0.38 Ω
0.38 Ω
0.38 Ω
I_D
11 A
11 A
11 A
11 A ⁽¹⁾
11 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices is realized with the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-220
3
1
DPAK
3
1
D²PAK
123
I²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STB12NM50N
B12NM50N
STD12NM50N
D12NM50N
STI12NM50N
I12NM50N
STF12NM50N
STP12NM50N
F12NM50N
P12NM50N
Package
D²PAK
DPAK
I²PAK
TO-220FP
TO-220
July 2008
Rev 8
Packaging
Tape and reel
Tape and reel
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