STB10NK60Z Datasheet, PDF (5/19 Pages) STMicroelectronics – N-channel 600V - 0.65OHM - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET

STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
2 Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDMNote 2 Source-drain Current (pulsed)
V_SDNote 4 Forward on Voltage
I_SD=10A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD=8A, di/dt = 100A/µs,
V_DD=40 V, Tj=150°C
Min.
Typ. Max. Unit
10
A
36
A
1.6
V
570
ns
4.3
µC
15
A
(1) I_SD ≤10A, di/dt ≤200A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
(2) Pulse width limited by safe operating area
(3) Limited only by maximum temperature allowed
(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%
(5) C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS increases from 0
to 80%
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