STB10NK60Z Datasheet, PDF (2/19 Pages) STMicroelectronics – N-channel 600V - 0.65OHM - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET

1 Absolute maximum ratings
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
1 Absolute maximum ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D
Drain-Source Voltage (V_GS = 0)
Drain-gate Voltage (R_GS = 20kΩ)
Gate-Source Voltage
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM
Note 2
Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ)
dv/dt
Note 1
Peak Diode Recovery voltage slope
V_ISO
Insulation Withstand Volatge (DC)
T_j
Operating Junction Temperature
T_stg
Storage Temperature
Value
TO-220/D²/I²PAK TO-220FP TO-247
600
600
± 30
10
10
(Note 3)
10
5.7
5.7
5.7
(Note 3)
36
36
(Note 3)
36
115
35
156
0.92
0.28
1.25
4000
4.5
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
--
2500
--
V
-55 to 150
°C
Table 2. Thermal data
Rthj-case
Rthj-pcb
Rthj-amb
T_l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max
(when mounted on minimum Footprint)
Thermal Resistance Junction-amb Max
Maximum Lead Temperature For Soldering
Purpose
TO-220
D²PAK TO-220FP TO-247 Unit
I²PAK
1.09
3.6
0.8 °C/W
60
°C/W
62.5
50
°C/W
300
°C
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