 English |
|
|
|
|
|
|
|
| STB10NK60Z Datasheet, PDF (4/19 Pages) STMicroelectronics – N-channel 600V - 0.65OHM - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET | |||
| |||
| ◁ |
2 Electrical characteristics
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. On/Off
Symbol
Parameter
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current (VGS = 0)
Gate Body Leakage Current
(VDS = 0)
Gate Threshold Voltage
Static Drain-Source On
Resistance
Test Conditions
ID = 250µA, VGS= 0
VDS = Max Rating,
VGS = ±15V, VDS = 0
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 20 A
Min. Typ. Max. Unit
600
V
1
µA
50
±10
µA
3
3.75
4.5
V
0.65 0.75
â¦
Table 6. Dynamic
Symbol
Parameter
Test Conditions
gfs Note 4
Ciss
Coss
Crss
Coss eq.
Note 5
Qg
Qgs
Qgd
Forward Transconductance VDS =15V, ID = 4.5A
Input Capacitance
Output Capacitance
VDS =25V, f=1 MHz, VGS=0
Reverse Transfer Capacitance
Equivalent Ouput Capacitance VGS=0, VDS =0V to 480V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=480V, ID = 8A
VGS =10V
(see Figure 19)
Min. Typ. Max. Unit
7.8
S
1370
pF
156
pF
37
pF
90
pF
50
70
nC
10
nC
25
nC
Table 7. Switching on/off
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
td(off)
tf
tr(Voff)
tf
tc
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD=300 V, ID=4A,
RG=4.7â¦, VGS=10V
(see Figure 20)
VDD=300 V, ID=4A,
RG=4.7â¦, VGS=10V
(see Figure 20)
VDD=480 V, ID=8A,
RG=4.7â¦, VGS=10V
(see Figure 20)
Min. Typ. Max. Unit
20
ns
20
ns
55
ns
30
ns
18
ns
18
ns
36
ns
4/19
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese