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| STB10NK60Z Datasheet, PDF (3/19 Pages) STMicroelectronics – N-channel 600V - 0.65OHM - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET | |||
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STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
Table 3. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche Current, repetitive or
Not-Repetitive (pulse width limited by Tj max)
Single Pulse Avalanche Energy
EAS
(starting Tj=25°C, ID=IAR, VDD= 50V)
EAR
Repetitive Avalanche Energy
(pulse width limited by Tj max)
Table 4. Gate-source zener diode
Symbol
Parameter
Test Conditions
BVGSO
Gate-Source
Igs=±1mA
Breakdown Voltage (Open Drain)
Min.
30
1 Absolute maximum ratings
Max Value
Unit
9
A
300
mJ
3.5
mJ
Typ.
Max.
Unit
V
1.1 PROTECTION FEATURES OF GATE-TO-SOURCE ZENER
DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the
deviceâs ESD capability, but also to make them safely absorb possible voltage transients that
may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the deviceâs
integrity. These integrated Zener diodes thus avoid the usage of external components.
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