RHF330 Datasheet, PDF (5/22 Pages) STMicroelectronics – Rad-hard 1 GHz low noise operational amplifier

RHF330
Electrical characteristics
Table 4.
Symbol
Electrical characteristics for V_CC= ±2.5 V, T_amb = +25° C
(unless otherwise specified) (continued)
Parameter
Test conditions
Temp. Min.
SR Slew rate
V_OH High level output voltage
V_OL Low level output voltage
I_sink(1)
I_out
I_source(2)
V_out = 2 V_pp,
A_V = +2, R_L = 100 Ω
R_L = 100 Ω
R_L = 100 Ω
Output to GND
Output to GND
+25°C
+125°C
+25°C
-55°C
+125°C
+25°C
-55°C
+125°C
+25°C
-55°C
+125°C
+25°C
-55°C
1.35
1.5
1.35
360
360
360
-320
-320
-320
Noise and distortion
eN
iN
SFDR
Equivalent input noise
voltage⁽³⁾
F = 100 kHz
Equivalent positive input noise
current⁽³⁾
F = 100 kHz
Equivalent negative input
noise current⁽³⁾
F = 100 kHz
Spurious free dynamic range
A_V = +2, V_out = 2 V_pp,
R_L = 100 Ω
F = 10 MHz
F = 20 MHz
F = 100 MHz
F = 150 MHz
+25°C
+25°C
+25°C
+25°C
+25°C
+25°C
+25°C
1. See Figure 11 for more details.
2. See Figure 10 for more details.
3. See Chapter 5 on page 14.
Typ.
1800
1.64
-1.55
453
-400
1.3
22
16
-78
-73
-48
-37
Max. Unit
V/μs
V
-1.35
V
-1.5
-1.35
mA
nV/√ Hz
pA/√ Hz
pA/√ Hz
dBc
Table 5. Closed-loop gain and feedback components
Gain (V/V)
+1
1
+2
-2
+4
-4
+ 10
- 10
R_fb (Ω)
300
270
300
270
240
240
200
200
Doc ID 15576 Rev 3
5/22