RHF330 Datasheet, PDF (4/22 Pages) STMicroelectronics – Rad-hard 1 GHz low noise operational amplifier

Electrical characteristics
2
Electrical characteristics
RHF330
Table 4.
Symbol
Electrical characteristics for V_CC= ±2.5 V, T_amb = +25° C
(unless otherwise specified)
Parameter
Test conditions
Temp. Min.
DC performance
V_io Input offset voltage
I_ib+
Non-inverting input bias
current
I_ib- Inverting input bias current
Common mode rejection ratio
CMR
20 log (ΔV_ic/ΔV_io)
ΔV_ic = ±1 V
Supply voltage rejection ratio
SVR
20 log (ΔV_CC/ΔV_out)
ΔV_CC = 3.5 V to 5 V
Power supply rejection ratio
PSRR
20 log (ΔV_CC/ΔV_out)
ΔV_CC = 200 mV_pp at
1 kHz
I_CC Supply current
No load
+125°C -3.1
+25°C -3.1
-55°C -3.1
+125°C
+25°C
-55°C
+125°C
+25°C
-55°C
+125°C 48
+25°C 48
-55°C 48
+125°C 45
+25°C 60
-55°C 45
+25°C
+125°C
+25°C
-55°C
Dynamic performance and output characteristics
R_OL Transimpedance
-3 dB bandwidth
Bw
Gain flatness at 0.1 dB
+125°C 85
ΔV_out= ±1 V, R_L = 100 Ω +25°C 104
-55°C 85
V_out = 20 mV_pp
R_L = 100 Ω, A_V = +2
+25°C
+125°C 400
R_L = 100 Ω, A_V = -4
+25°C 400
-55°C 400
V_out = 20 mV_pp
A_V = +2, R_L = 100 Ω
+25°C
Typ.
0.18
26
7
54
74
56
16.6
153
1000
630
160
Max.
+3.1
+3.1
+3.1
55
55
55
34
22
34
20.2
20.2
20.2
Unit
mV
μA
μA
dB
dB
dB
mA
kΩ
MHz
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Doc ID 15576 Rev 3