PD20010TR-E Datasheet, PDF (5/13 Pages) STMicroelectronics – RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

PD20010-E
3
Typical performance
Typical performance
Figure 2. Drain current vs. gate voltage Figure 3. DC output characteristics
Figure 4. Capacitances vs. drain
voltage
90
80
70
60
50
40
30
20
10
0
0
Coss
Crss
Ciss
5
10
15
20
25
30
Drain voltage (V)
Doc ID 15514 Rev 2
5/13