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PD20010TR-E Datasheet, PDF (4/13 Pages) STMicroelectronics – RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
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Electrical characteristics
2
Electrical characteristics
PD20010-E
2.1
2.2
2.3
2.4
TCASE = + 25 °C
Static
Table 4. Static
Symbol
IDSS
IGSS
VGS(Q)
VDS(ON)
CISS
COSS
CRSS
VGS = 0V
VGS = 5 V
VDS = 10 V
VGS = 10 V
VGS = 0V
VGS = 0V
VGS = 0V
Test conditions
VDS = 25 V
VDS = 0 V
ID = 150 mA
ID = 1 A
VDS = 12.5 V
VDS = 12.5 V
VDS = 12.5 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
Min. Typ. Max. Unit
1
µA
1
µA
3.0
4.3 V
0.34
V
45
pF
36
pF
1.2
pF
Dynamic
Table 5. Dynamic
Symbol
Test conditions
Min. Typ. Max. Unit
P3dB VDD = 13.6 V, IDQ = 150 mA
f = 2000 MHz 10 15
GP VDD = 13.6 V, IDQ = 150 mA, POUT = 10 W, f = 2000 MHz 10 11
hD VDD = 13.6 V, IDQ = 150 mA, POUT = P3dB, f = 2000 MHz 45 53
Load VDD = 15.5 V, IDQ = 300 mA, POUT = 10 W, f = 2000 MHz
mismatch All phase angles
20:1
W
dB
%
VSWR
ESD protection characteristics
Table 6.
ESD protection characteristics
Test conditions
Human body model
Machine model
Class
2
M3
Moisture sensitivity level
Table 7.
Moisture sensitivity level
Test conditions
J-STD-020B
Rating
MSL 3
4/13
Doc ID 15514 Rev 2
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