PD20010TR-E Datasheet, PDF (3/13 Pages) STMicroelectronics – RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

PD20010-E
1
Electrical data
1.1
Maximum ratings
T_CASE = 25 °C
Table 2. Absolute maximum ratings
Symbol
Parameter
V_(BR)DSS
V_GS
I_D
P_DISS
T_J
T_STG
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation (@ T_C = 70 °C)
Max. operating junction temperature
Storage temperature
1.2
Thermal data
Table 3. Thermal data
Symbol
Parameter
R_thJC
Junction - case thermal resistance
Electrical data
Value
Unit
40
V
-0.5 to +15
V
5
A
59
W
165
°C
-65 to +150
°C
Value
1.6
Unit
°C/W
Doc ID 15514 Rev 2
3/13