PD20010TR-E Datasheet, PDF (1/13 Pages) STMicroelectronics – RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

PD20010-E
RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Datasheet — production data
Features
■ Excellent thermal stability
■ Common source configuration
■ P_OUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V
■ Plastic package
■ ESD protection
■ In compliance with the 2002/95/EC European
directive
PowerSO-10RF
(formed lead)
Description
The PD20010-E is a common source N-Channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It
operates at 13.6 V in common source mode at
frequencies of up to 1 GHz. PD20010-E boasts
the excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
PD20010-E’s superior linearity performance
makes it an ideal solution for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
PowerSO-10RF
(straight lead)
Figure 1. Pin connection
Source
Gate
Drain
Table 1. Device summary
Order codes
PD20010-E
PD20010S-E
PD20010TR-E
PD20010STR-E
Packages
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
May 2012
This is information on a product in full production.
Doc ID 15514 Rev 2
Packing
Tube
Tube
Tape and reel
Tape and reel
1/13
www.st.com
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