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NAND01G-B Datasheet, PDF (45/64 Pages) STMicroelectronics – 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01G-B, NAND02G-B
10 Maximum rating
Maximum rating
Stressing the device above the ratings listed in Table 19: Absolute Maximum Ratings, may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 19. Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
Min
Max
TBIAS
TSTG
VIO(1)
VDD
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
1.8V devices
3 V devices
1.8V devices
3 V devices
– 50
– 65
– 0.6
– 0.6
– 0.6
– 0.6
125
°C
150
°C
2.7
V
4.6
V
2.7
V
4.6
V
1. Minimum Voltage may undershoot to –2V for less than 20ns during transitions on input and I/O pins.
Maximum voltage may overshoot to VDD + 2V for less than 20ns during transitions on I/O pins.
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