NAND01G-B Datasheet, PDF (1/64 Pages) STMicroelectronics – 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

NAND01G-B
NAND02G-B
1 Gbit, 2 Gbit,
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
Feature summary
● High Density NAND Flash memories
– Up to 2 Gbit memory array
– Up to 64Mbit spare area
– Cost effective solutions for mass
storage applications
● NAND interface
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
● Supply voltage
– 1.8V device: V_DD = 1.7 to 1.95V
– 3.0V device: V_DD = 2.7 to 3.6V
● Page size
– x8 device: (2048 + 64 spare) Bytes
– x16 device: (1024 + 32 spare) Words
● Block size
– x8 device: (128K + 4K spare) Bytes
– x16 device: (64K + 2K spare) Words
● Page Read/Program
– Random access: 25µs (max)
– Sequential access: 50ns (min)
– Page program time: 300µs (typ)
● Copy Back Program mode
– Fast page copy without external
buffering
● Cache Program and Cache Read modes
– Internal Cache Register to improve the
program and read throughputs
● Fast Block Erase
– Block erase time: 2ms (typ)
● Status Register
● Electronic Signature
● Chip Enable ‘don’t care’
– for simple interface with microcontroller
TSOP48 12 x 20mm
FBGA
VFBGA63 9.5 x 12 x 1mm
TFBGA63 9.5 x 12 x 1.2mm
● Serial Number option
● Data protection
– Hardware and Software Block Locking
– Hardware Program/Erase locked during
Power transitions
● Data integrity
– 100,000 Program/Erase cycles
– 10 years Data Retention
■ ECOPACK^® packages
■ Development tools
– Error Correction Code software and
hardware models
– Bad Blocks Management and Wear
Leveling algorithms
– File System OS Native reference
software
– Hardware simulation models
February 2006
Rev 4.0
1/64
www.st.com
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