STB11NB40-1 Datasheet, PDF (4/11 Pages) STMicroelectronics – N-CHANNEL 400V - 0.48ohm - 10.7A DPAK/IPAK PowerMESH MOSFET

STB11NB40/STB11NB40-1
Table 11. Source Drain Diode
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDM ^{(1) Source-drain Current}
(pulsed)
V_SD ^{(2) Forward On Voltage}
I_SD = 10.7 A; V_GS = 0
t_rr
Reverse Recovery Time I_SD = 10.7 A; di/dt = 100 A/µs
Q_rr
Reverse RecoveryCharge V_DD = 100 V; T_j = 150 °C
(see test circuit, Figure 18)
I_RRAM Reverse RecoveryCharge
Note: 1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max. Unit
10.7
A
42.8
A
1.6
V
400
ns
3.4
µC
17
A
Figure 3. Safe Operating Area
Figure 4. Thermal Impedance
Figure 5. Output Characteristics
Figure 6. Transfer Characteristics
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