STB11NB40-1 Datasheet, PDF (2/11 Pages) STMicroelectronics – N-CHANNEL 400V - 0.48ohm - 10.7A DPAK/IPAK PowerMESH MOSFET

STB11NB40/STB11NB40-1
Table 3. Absolute Maximum Ratings
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain- gate Voltage (R_GS = 20 kΩ)
V_GS
Gate-source Voltage
I_D
Drain Current (cont.) at T_C = 25 °C
I_D
Drain Current (cont.) at T_C = 100 °C
I_DM ⁽¹⁾
Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25 °C
Derating Factor
dv/dt ^{(2) Storage Temperature}
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
Note: 1. Pulse width limited by safe operating area
2. I_SD ≤ 11A, di/dt ≤ 200 A/µs, V_DD ≤ V(_BR)DSS, T_j ≤ T_JMAX
Table 4. Thermal Data
Symbol
Parameter
R_thj-case Thermal Resistance Junction-case
Max
R_thj-amb Thermal Resistance Junction-ambient Max
T_l
Maximum Lead Temperature For Soldering Purpose
Table 5. Avalanche Characteristics
Symbol
Parameter
I_AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max, δ < 1%)
E_AS
Single Pulse Avalanche Energy
(starting T_j = 25 °C; I_D = I_AR; V_DD = 50 V)
Value
400
400
± 30
10.7
6.7
42.8
125
1.0
4.5
-65 to 150
150
Value
1.0
62.5
300
Max Value
10.7
530
Unit
V
V
V
A
A
A
W
W°/C
V/ns
°C
°C
Unit
°C/W
°C/W
°C
Unit
A
mJ
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