STB11NB40-1 Datasheet, PDF (3/11 Pages) STMicroelectronics – N-CHANNEL 400V - 0.48ohm - 10.7A DPAK/IPAK PowerMESH MOSFET

STB11NB40/STB11NB40-1
ELECTRICAL CHARACTERISTICS (T_case = 25°C unless otherwise specified)
Table 6. Off
Symbol
Parameter
V_(BR)DSS Drain-source
Breakdown Voltage
I_DSS Zero Gate Voltage
Drain Current (V_GS = 0)
I_GSS
Gate-body Leakage
Current (V_DS = 0)
Test Conditions
I_D = 250 µA; V_GS = 0
V_DS = Max Rating
V_DS = Max Rating Tc = 125 °C
V_GS = ± 30 V
Min. Typ. Max. Unit
400
V
1
µA
50
µA
± 100 nA
Table 7. On ⁽¹⁾
Symbol
Parameter
Test Conditions
V_GS(th) Gate Threshold Voltage
V_DS = V_GS; I_D = 250 µA
R_DS(on) Static Drain-source On
Resistance
V_GS = 10V; I_D = 5.3 A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max. Unit
3
4
5
V
0.48 0.55
Ω
Table 8. Dynamic
Symbol
Parameter
Test Conditions
g_fs ^{(1) Forward}
Transconductance
V_DS > I_D(on) x R_DS(on)max; I_D = 5.3 A
C_iss Input Capacitance
V_DS = 25 V; f = 1 MHz; V_GS = 0
C_oss Output Capacitance
C_rss Reverse Transfer
Capacitance
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max. Unit
5
6.5
S
1115 1450 pF
210 280
pF
22
30
pF
Table 9. Switching On
Symbol
Parameter
td(on) Turn-on Time
tr
Rise Time
Q_g Total Gate Charge
Q_gs Gate-Source Charge
Q_gd Gate-Drain Charge
Test Conditions
V_DD = 200 V; I_D = 5.3 A; R_G = 4.7 Ω
V_GS = 10 V (see test circuit, Figure 16)
V_DD = 320 V; I_D = 10.7 A; V_GS = 10 V
Min. Typ. Max. Unit
17
25
ns
10
15
ns
29.5 43
nC
10.6
nC
11.8
nC
Table 10. Switching Off
Symbol
Parameter
t_r(Voff) Off-voltage Rise Time
t_f
Fall Time
t_c
Cross-over Time
Test Conditions
V_DD = 320 V; I_D = 10.7 A; R_G = 4.7 Ω
V_GS = 10 V; (see test circuit, Figure 18)
Min. Typ. Max. Unit
10
14
ns
10
14
ns
17
25
ns
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