STB11NB40-1 Datasheet, PDF (1/11 Pages) STMicroelectronics – N-CHANNEL 400V - 0.48ohm - 10.7A DPAK/IPAK PowerMESH MOSFET

STB11NB40
STB11NB40-1
N-CHANNEL 400V - 0.48 Ω - 10.7A D²PAK/I²PAK
PowerMESH™ MOSFET
Table 1. General Features
Type
V_DSS
R_DS(on)
STB11NB40
400 V
< 0.55 Ω
STB11NB40-1 400 V
< 0.55 Ω
I_D
10.7 A
10.7 A
Figure 1. Package
FEATURES SUMMARY
■ TYPICAL R_DS(on) = 0.48 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
R_DS(on) per area, exceptional avalanche and dv/dt
capabilities and unrivalled gate charge and switch-
ing characteristics.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
I²PAK
TO-262
123
3
1
D²PAK
TO-263
Figure 2. Internal Schematic Diagram
Table 2. Order Codes
Part Number
STB11NB40T4
STB11NB40-1
Marking
B11NB40
B11NB40
April 2004
Package
D²PAK
I²PAK
Packaging
TAPE & REEL
TUBE
REV. 2
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