SD56150 Datasheet, PDF (4/8 Pages) STMicroelectronics – RF POWER TRANSISTORS The LdmoST FAMILY

SD56150
TYPICAL PERFORMANCE
Output Power vs. Input Power
Power Gain vs. Output Power
180
160
140
Id q = 2 x2 5 0 m A
120
100
80
60
40
20
Vdd = 32 V
f = 8 60 MHz
0
0
1
2
3
4
5
Pin (W )
20
19
Id q = 2 x6 0 0 mA
18
17
Id q = 2 x2 0 0 mA
Id q = 2 x4 0 0 mA
16
Id q = 2 x2 5 0 mA
15
14
13
12
Vdd = 32 V
11 _{f = 860 MHz}
10
0
50
100
150
200
Pout (W)
Efficiency vs. Output Power
80
70
60
50
40
Id q = 2 x2 5 0 mA
30
20
10
0
0
50
100
Pout (W)
Efficiency vs. Supply Voltage
70
60
50
40
30
20
10
0
0
f = 860 MHz
Id q = 2 x 2 5 0 m A
10
20
Vdd (V)
4/8
Vdd = 32 V
f = 860 MHz
150
200
Pin = 5 W
Pin = 3.2 W
Pin = 1.6 W
30
40
Output Power vs. Supply Voltage
200
180
160
140
120
100
80
60
40
20 ^{f = 860 MHz}
Idq = 2 x 25 0 mA
0
0
10
20
Vdd (V)
Pin = 5 W
Pin = 3.2 W
Pin = 1.6 W
30
40
Intermodulation Distorsion vs. Output Power
0
-10
-20
Idq = 2x250mA
Id q = 2 x6 0 0 m A
Id q = 2 x2 0 0 m A
-30
-40
-50
-60
0
Id q = 2 x4 0 0 m A
50
100
Pout (W)
f1 = 859.9 MHz
f2 = 860.0 MHz
Vdd = 32 V
150
200