SD56150 Datasheet, PDF (3/8 Pages) STMicroelectronics – RF POWER TRANSISTORS The LdmoST FAMILY

TYPICAL PERFORMANCE
Capacitance vs. Drain Voltage
1000
C is s
100
C os s
10
C rs s
f = 1 MHz
1
0
5
10
15
20
25
30
35
40
Vdd (V)
SD56150
Gate Source Voltage vs. Case Temperature
1.0 4
1.0 2
1.0 0
0.9 8
0.9 6
0.9 4
Vds = 10 V
0.9 2
-25
0
Id = 6 A
Id = 5 A
Id = 4 A
Id = 3 A
Id = 2 A
Id = 1 A
Id = 0 .5 A
25
50
Tc (°C)
75
100
Drain Current vs. Gate-Source Voltage
4.5
4
3.5
3
2.5
2
1.5
1
0.5
Vds = 10 V
0
0
1
2
3
4
5
6
Vgs (V)
3/8