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SD56150 Datasheet, PDF (2/8 Pages) STMicroelectronics – RF POWER TRANSISTORS The LdmoST FAMILY
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SD56150
ELECTRICAL SPECIFICATION (TCASE = 25 °C)
STATIC (Per Section)
Symbol
Test Conditions
V(BR)DSS VGS = 0 V
IDS = 10 mA
IDSS
VGS = 0 V
VDS = 28 V
IGSS
VGS = 20 V
VDS = 0 V
VGS(Q)
VDS = 28 V
ID = 100 mA
VDS(ON) VGS = 10 V
ID = 3 A
GFS
VDS = 10 V
ID = 3 A
CISS*
VGS = 0 V
VDS = 28 V
f = 1 MHz
COSS
VGS = 0 V
VDS = 28 V
f = 1 MHz
CRSS
VGS = 0 V
* Includes Internal Input Moscap.
VDS = 28 V
f = 1 MHz
DYNAMIC
Symbol
Test Conditions
POUT
VDD = 32 V IDQ = 500 mA
f = 860 MHz
GPS
VDD = 32 V IDQ = 500 mA POUT = 150 W f = 860 MHz
ηD
VDD = 32 V IDQ = 500 mA POUT = 150 W f = 860 MHz
Load
VDD = 32 V IDQ = 500 mA POUT = 150 W
mismatch ALL PHASE ANGLES
f = 860 MHz
Min. Typ. Max. Unit
65
V
1
µA
1
µA
2.0
5.0
V
0.5
0.8
V
2.5
4
mho
255
pF
50
pF
2.9
pF
Min.
150
13
50
10:1
Typ.
16.5
60
Max. Unit
W
dB
%
VSWR
IMPEDANCE DATA
D
ZDL
Typical Input
Impedance
G
Zin
Typical Drain
Load Impedance
S
FREQ.
ZIN (Ω)
ZDL(Ω)
860 MHz
4.7 - j 5.5
3.6 + j 6.5
880 MHz
4.3 - j 6.9
3.9 + j 7.4
900 MHz
4.5 - j 8.8
4.4 + j 7.8
Measured drain to drain and gate to gate respectively.
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