SD56150 Datasheet, PDF (1/8 Pages) STMicroelectronics – RF POWER TRANSISTORS The LdmoST FAMILY

N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
SD56150
RF POWER TRANSISTORS
The LdmoST FAMILY
PRELIMINARY DATA
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION, PUSH-
PULL
• P_OUT = 150 W WITH 13 dB gain @ 860 MHz /32V
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
M252
epoxy sealed
ORDER CODE
SD56150
BRANDING
SD56150
DESCRIPTION
The SD56150 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0 GHz.
The SD56150 is designed for high gain and
broadband performance operating in common
source mode at 32 V. Its internal matching makes it
ideal for TV broadcast applications requiring high
linearity.
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25 ^°C)
Symbol
Parameter
V_(BR)DSS Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current
P_DISS
Power Dissipation (@ Tc = 70 ^°C)
Tj
Max. Operating Junction Temperature
T_STG
Storage Temperature
THERMAL DATA
R_th(j-c) Junction -Case Thermal Resistance
November, 27 2002
PIN CONNECTION
1
2
5
1. Drain
2. Drain
3. Source
3
4
4. Gate
5. Gate
Value
65
± 20
17
236
200
-65 to +150
0.55
Unit
V
V
A
W
°C
°C
°C/W
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