STD7N90K5 Datasheet, PDF (3/16 Pages) STMicroelectronics – Ultra-low gate charge

STD7N90K5
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
VGS
ID
ID
ID⁽¹⁾
PTOT
dv/dt ⁽²⁾
dv/dt ⁽³⁾
Tj
Tstg
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Operating junction temperature range
Storage temperature range
Notes:
(1)_{Pulse width limited by safe operating area}
(2)_{ISD ≤ 7 A, di/dt ≤ 100 A/μs; VDS peak < V(BR)DSS, VDD = 450 V}
(3)_{VDS ≤ 720 V}
Symbol
Rthj-case
Rthj-pcb⁽¹⁾
Table 3: Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Notes:
(1)_{When mounted on 1 inch² FR-4 board, 2 oz Cu.}
Symbol
IAR
EAS
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive (pulse
width limited by Tjmax)
Single pulse avalanche energy (starting Tj = 25 °C,
ID = IAR, VDD = 50 V)
Electrical ratings
Value
± 30
7
4.4
28
90
4.5
50
- 55 to 150
Unit
V
A
A
A
W
V/ns
°C
Value
1.38
50
Unit
°C/W
°C/W
Value
Unit
2.4
A
230
mJ
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