STD7N90K5 Datasheet, PDF (1/16 Pages) STMicroelectronics – Ultra-low gate charge

STD7N90K5
N-channel 900 V, 0.72 Ω typ., 7 A MDmesh™ K5
Power MOSFET in a DPAK package
Datasheet - production data
Features
Order code
STD7N90K5
VDS
900 V
RDS(on) max.
ID
0.81 Ω
7A
Figure 1: Internal schematic diagram
 Industry’s lowest RDS(on) x area
 Industry’s best FoM (figure of merit)
 Ultra-low gate charge
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order code
STD7N90K5
Table 1: Device summary
Marking
Package
7N90K5
DPAK
Packing
Tape and reel
October 2016
DocID029862 Rev 1
This is information on a product in full production.
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