ESDAVLC5-4BX4 Datasheet, PDF (3/8 Pages) STMicroelectronics – 4 bidirectional Transil diodes

ESDAVLC5-4BX4
Characteristics
Figure 3. Leakage current versus junction
temperature (typical values)
IR (nA)
10
IO/GND
1
0.1
Tj (°C)
0.01
25
50
75
100
125
150
Figure 4. Junction capacitance versus reverse
applied voltage (typical values)
C (pF)
12
11
10
Tj = 25 °C
IO/GND
9
8
7
6
5
4
3
2
1
VR (V)
0
0.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00
Figure 5. ESD response to IEC 61000-4-2
(typical values, +8 kV contact discharge)
10 V/div
1 56 V
1 VPP: ESD peak voltage
2 VCL :clamping voltage @ 30 ns
3 VCL :clamping voltage @ 60 ns
4 V_CL :clamping voltage @ 100 ns
2 22 V
3 21 V
4 15 V
20 ns/div
Figure 6. ESD response to IEC 61000-4-2
(typical values, -8 kV contact discharge)
10 V/div
2 -15 V
3 -15 V
4 -10 V
1 -48 V
1 VPP: ESD peak voltage
2 VCL :clamping voltage @ 30 ns
3 VCL :clamping voltage @ 60 ns
4 V_CL :clamping voltage @ 100 ns
20 ns/div
Figure 7. S21 attenuation measurement
S21 (dB)
0
-3
-6
-9
-12
-15
-18
-21
100k
1M
10M
IO1
IO3
100M
F (Hz)
1G
10G
IO2
IO4
Figure 8. TLP measurement
IPP (A)
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0
5
GND to I/O
I/O to GND
VCL (V)
10
15
20
25
30
35
40
DocID023365 Rev 2
3/8
8