ESDAVLC5-4BX4 Datasheet, PDF (2/8 Pages) STMicroelectronics – 4 bidirectional Transil diodes

Characteristics
1
Characteristics
ESDAVLC5-4BX4
Symbol
Table 1. Absolute maximum ratings (T_amb = 25 °C)
Parameter
Value
Unit
V_PP ⁽¹⁾ Peak pulse voltage
IEC 61000-4-2 contact discharge
IEC 61000-4-2 air discharge
I_PP
Peak pulse current (8/20 µs)
P_PP
Peak pulse power (8/20 µs)
T_j
Operating temperature range
T_stg
Storage temperature range
T_L
Maximum lead temperature for soldering during 10 s
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
16
kV
16
2
A
30
W
-30 to +85
°C
- 55 to +150
°C
260
°C
Symbol
V_BR
=
V_RM
=
V_CL
=
I_RM
=
I_PP
=
R_D
=
C_LINE =
Figure 2. Electrical characteristics (definitions)
Parameter
Breakdown voltage
Stand-off voltage
Clamping voltage
Leakage current @ V_RM
Peak pulse current
Dynamic resistance
Line capacitance
I
VCL VBR VRM
IRM
V
VRM VBR VCL
Slope: 1/Rd
IPP
Symbol
Table 2. Electrical characteristics (values, T_amb = 25 °C)
Parameter
Test conditions
Value
Unit
Min. Typ. Max.
V_BR Breakdown voltage
I_R = 1 mA
5.5
V
I_RM
Leakage current
V_RM = 3 V
50 nA
V_CL
Clamping voltage
I_PP = 1 A, 8/20 µs
18
V
C_line Line capacitance, I/O to GND
V_R = 0 V, F_osc = 1 MHz,
V_osc = 30 mV
10 pF
I/O to GND
R_d
Dynamic resistance, pulse width 100 ns
GND to I/O
0.53
Ω
0.37
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