English
Language : 

DALC208SC6Y Datasheet, PDF (3/12 Pages) STMicroelectronics – Automotive low capacitance diode array for ESD protection
◁
DALC208SC6Y
Table 3. Electrical characteristics - values (Tamb = 25 °C)
Symbol
Parameter
Conditions
Typ.
VF
Forward voltage
IF = 50 mA
IR
Reverse leakage current per diode
VR = 5 V
C
Input capacitance between Line and GND See Figure 3.
7
Figure 3. Input capacitance measurement
REF2
Characteristics
Max.
Unit
1.2
V
1
µA
10
pF
I/O
VR
G
+V CC
REF1 connected to GND
REF2 connected to +Vcc
Input applied :
Vcc = 5 V, Vsign = 30 mV, F = 1 MHz
REF1
Figure 4.
Reverse clamping voltage
versus peak pulse current
(Tj initial = 25 °C), typical values
Ipp(A)
2.0
tp=2.5µs
rectangular waveform
1.0
Figure 5.
Variation of leakage current versus
junction temperature
(typical values)
IR(µA)
100
10
1
0.1
I/O vs REF1
VCL(V)
or REF2
Tj(°C)
0.1
5
10
15
20
25
0.01
30
25
50
75
100
125
150
Figure 6.
Input capacitance versus reverse applied voltage (typical values)
C(pF)
8.0
7.5
7.0
6.5
6.0
5.5
F=1MHz
Vsign=30mV
VR(V)
Vref1/ref2=5V
5.0
0
1
2
3
4
5
Doc ID 16362 Rev 1
3/12
 ▷