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STBP112 Datasheet, PDF (27/38 Pages) STMicroelectronics – Overvoltage protection device | |||
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STBP112
DC and AC parameters
Table 5. DC and AC characteristics (continued)
Symbol
Description
Test condition(1)
Min. Typ. Max. Unit
VIH(EN)
RPD(EN)
EN high level input voltage
EN internal pull-down
resistor(3)
VIN > 2.5 V, V(EN) = 5 V
1.2
V
100 250 400 kΩ
Timing parameters
ton
toff(5)
tdis(5)
trec
Startup delay(4)
Time measured from VIN > VUVLO to
VOUT = 0.3 V (no load on the output).
Output turn-off time
Time measured from VIN > VOVLO to
VOUT ⤠0.3 V. VIN increasing from
5.0 V to 8.0 V at 3.0 V/µs, RLOAD = 5 Ω,
CLOAD = 0.
Disable time
Time measured from V(EN) ⥠1.2 V to
VOUT < 0.3 V, RLOAD = 5 Ω, CLOAD = 0.
Recovery delay from UVLO, Time measured to VOUT = 0.3 V
OVLO, or thermal shutdown(4) (no load on the output)
8
ms
1
µs
1
5
8
ms
Thermal shutdown
Toff
Thermal shutdown threshold
temperature
140 150 °C
THYS(off) Thermal shutdown hysteresis
20
°C
1. Test conditions described in Table 4 (except where noted).
2. Hysteresis of 60 mV typ. available upon request.
3. Version without pull-down resistor or with permanently connected pull-down resistor available upon request.
4. Delays of 16, 32, and 64 ms available upon request.
5. Guaranteed by design. Not tested in production.
Doc ID 023357 Rev 3
27/38
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