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STBP112 Datasheet, PDF (27/38 Pages) STMicroelectronics – Overvoltage protection device
STBP112
DC and AC parameters
Table 5. DC and AC characteristics (continued)
Symbol
Description
Test condition(1)
Min. Typ. Max. Unit
VIH(EN)
RPD(EN)
EN high level input voltage
EN internal pull-down
resistor(3)
VIN > 2.5 V, V(EN) = 5 V
1.2
V
100 250 400 kΩ
Timing parameters
ton
toff(5)
tdis(5)
trec
Startup delay(4)
Time measured from VIN > VUVLO to
VOUT = 0.3 V (no load on the output).
Output turn-off time
Time measured from VIN > VOVLO to
VOUT ≤ 0.3 V. VIN increasing from
5.0 V to 8.0 V at 3.0 V/µs, RLOAD = 5 Ω,
CLOAD = 0.
Disable time
Time measured from V(EN) ≥ 1.2 V to
VOUT < 0.3 V, RLOAD = 5 Ω, CLOAD = 0.
Recovery delay from UVLO, Time measured to VOUT = 0.3 V
OVLO, or thermal shutdown(4) (no load on the output)
8
ms
1
µs
1
5
8
ms
Thermal shutdown
Toff
Thermal shutdown threshold
temperature
140 150 °C
THYS(off) Thermal shutdown hysteresis
20
°C
1. Test conditions described in Table 4 (except where noted).
2. Hysteresis of 60 mV typ. available upon request.
3. Version without pull-down resistor or with permanently connected pull-down resistor available upon request.
4. Delays of 16, 32, and 64 ms available upon request.
5. Guaranteed by design. Not tested in production.
Doc ID 023357 Rev 3
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