M58WR032FT Datasheet, PDF (1/86 Pages) STMicroelectronics – 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory

M58WR032FT
M58WR032FB
32 Mbit (2Mb x16, Multiple Bank, Burst)
1.8V Supply Flash Memory
FEATURES SUMMARY
■ SUPPLY VOLTAGE
– V_DD = 1.7V to 2V for Program, Erase and
Read
– V_DDQ = 1.7V to 2.24V for I/O Buffers
– V_PP = 12V for fast Program (optional)
■ SYNCHRONOUS / ASYNCHRONOUS READ
– Synchronous Burst Read mode: 66MHz
– Asynchronous/ Synchronous Page Read
mode
– Random Access: 60ns, 70ns, 80ns
■ SYNCHRONOUS BURST READ SUSPEND
■ PROGRAMMING TIME
– 8µs by Word typical for Fast Factory
Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
■ MEMORY BLOCKS
– Multiple Bank Memory Array: 4 Mbit
Banks
– Parameter Blocks (Top or Bottom
location)
■ DUAL OPERATIONS
– Program Erase in one Bank while Read in
others
– No delay between Read and Write
operations
■ BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
■ SECURITY
– 128 bit user programmable OTP cells
– 64 bit unique device number
■ COMMON FLASH INTERFACE (CFI)
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
Figure 1. Package
FBGA
VFBGA56 (ZB)
7.7 x 9 mm
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Codes:
M58WR032FT (Top): 8814h
M58WR032FB (Bottom): 8815h
■ PACKAGE
– Compliant with Lead-Free Soldering
Processes
– Lead-Free Versions
November 2004
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